Coaxial waveguide controller attenuators designated for controlling the VHF-signals within waveguide leads / Semiconductor devices

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Coaxial waveguide controller attenuators designated for controlling the VHF-signals within waveguide leads

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Coaxial waveguide controller attenuators designated for controlling the VHF-signals within waveguide leads

Main ::: Electric vacuum and semiconductor UHF devices. ::: Semiconductor devices ::: Coaxial waveguide controller attenuators designated for controlling the VHF-signals within waveguide leads :::

Amplifier klystrons

Impulsive floating-drift amplifier klystrons

Metal/ceramic impulsive floating-drift klystrons

Transformer/amplifier klystrons

Complex device constituting

Complex device constituting a generator/converter/amplifier monoblock unit operating

Complex device constituting a monoblock unit with high power level and pulsed operation

This is a complex unit constituting a multifunctional generator module based on Gunn-diodes

Generator klystrons

Continuous operation oscillating klystrons of cermet structure

Continuous operation oscillating klystrons of cermet structure of continuous operation

Packaged continuous traveling wave lamps

Backward wave lamps (BWL) with periodical electrostatic focusing and electronic frequency re-tuning by two electrodes with waveguide energy output

Packaged continuous traveling wave lamps

Packaged low capacity O-type continuous backward wave lamps

Pulse magnetrons

Semiconductor devices

Coaxial waveguide controller attenuators designated for controlling the VHF-signals within waveguide leads

Field transistor-based power amplifiers produced in a hybrid/integral assembly

P-I-N – diodes , IMPATT, Gunn diodes, semiconductor switch diodes, semiconductor tuning diodes

Solid-state stabilized low-size generators based on Gunn diodes or IMPATT-diodes

These are quick action semiconductor waveguide switches with electrical control. These devices are also used as p-i-n diode modulators having one or several switchover and modulation channels.

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Amplifier klystrons

Impulsive floating-drift amplifier klystrons

Metal/ceramic impulsive floating-drift klystrons

Transformer/amplifier klystrons

Complex device constituting

Complex device constituting a generator/converter/amplifier monoblock unit operating

Complex device constituting a monoblock unit with high power level and pulsed operation

This is a complex unit constituting a multifunctional generator module based on Gunn-diodes

Generator klystrons

Continuous operation oscillating klystrons of cermet structure

Continuous operation oscillating klystrons of cermet structure of continuous operation

Packaged continuous traveling wave lamps

Backward wave lamps (BWL) with periodical electrostatic focusing and electronic frequency re-tuning by two electrodes with waveguide energy output

Packaged continuous traveling wave lamps

Packaged low capacity O-type continuous backward wave lamps

Pulse magnetrons

Semiconductor devices

Coaxial waveguide controller attenuators designated for controlling the VHF-signals within waveguide leads

Field transistor-based power amplifiers produced in a hybrid/integral assembly

P-I-N – diodes , IMPATT, Gunn diodes, semiconductor switch diodes, semiconductor tuning diodes

Solid-state stabilized low-size generators based on Gunn diodes or IMPATT-diodes

These are quick action semiconductor waveguide switches with electrical control. These devices are also used as p-i-n diode modulators having one or several switchover and modulation channels.

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Coaxial waveguide controller attenuators designated for controlling the VHF-signals within waveguide leads

Coaxial waveguide controller attenuators designated for controlling the VHF-signals within waveguide leads

М 34701, М 34702, М 34704, М 34705, М 34706, М 34707, М 34711, М 34712, М 34713, М 34714, М 34715, М 34716, М 34718, М 34720, М 34721, М 34722

Coaxial waveguide controller attenuators designated for controlling the VHF-signals within waveguide leads.

Technical Properties

Parameters	Acceptable Values
Parameters	М 34701 М 34712	М 34702 М 34713	М 34705 М 34704	М 34706 М 34711	М34707 М34722	М 34714 М 34720	М 34715 М 34721	М 34716 М 34718
Working waveband	Cm	Cm	(9,3 –9,9) GHz	(17,04 -8,33) GHz	Millimeter	Millimeter	(17,44 -37,5) GHz	(37,5-78,33) GHz
Input power (continuous), W, not exceeding	2,5	2,5	1,5	1,5	1,5	1,0; 1,5	2,5	1,5
Controller current, μА, not exceeding	100	100	50	100	30	130; 40	150	150
Maximum weakening, dB, not less than	40	20; 30	40	20	20	37	40	40
Initial weakening, dB, not exceeding	1,0÷ 1,5	0,7 ÷ 1,0	0,7	1,4 - 1,5	1,0	1,1; 2,2	2,2	2,5
Input SWCV, not exceeding	3,0	1,5 ÷ 2;3	1.4	2,5	2,5	2,5; 3,0	3,0	2,5;3,0
Minimum performance duration, hours	2000	2000	1000	5000	5000	10000	25000	25000
Weight, g	30÷160	30÷160	235	85-220	30	25	60,100	120
Dimensions, mm	35,45х37,35х41,3		42,42х 42,4х49	31х60х40	21х 7,25х 38	18,5х14х31	31х25,6х37	26х15,8х36

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